Browsing by Subject "Self-consistent solution"
Now showing items 1-6 of 6
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Article
Delta(δ)-doping of semiconductor nanowires
(2013)The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
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Article
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
(2013)The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Zn3N2nanowires: Growth, properties and oxidation
(2013)Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...
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Article
Zn3N2nanowires: Growth, properties and oxidation
(2013)Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...